Plano, TX, United States of America

Shoji Wada

This inventor holds 5 USPTO granted patents and 1 published patent application. Top assignee: Texas Instruments Corporation. Active years: 2016-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shoji Wada. Retrieved from https://idiyas.com/inventor/shoji-wada-eshf1rpz

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 5 

% Patents Active = 100.0

Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 11(Granted Patents)


Location History:

  • Plano, TX (US) (2016 - 2020)
  • McKinney, TX (US) (2024)

Company Filing History:


Years Active: 2016-2024

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5 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Shoji Wada

Introduction

Shoji Wada is a prominent inventor based in Plano, Texas, known for his significant contributions to the field of semiconductor technology. With a total of five patents to his name, Wada has made remarkable advancements in the development of gallium nitride-based transistors.

Latest Patents

One of Wada's latest patents is a normally-on gallium nitride-based transistor with a p-type gate. This semiconductor device features a gallium nitride-based low threshold depletion mode transistor (GaN FET) with a threshold potential ranging from −10 volts to −0.5 volts. The GaN FET includes a channel layer of III-N semiconductor material, which supports a two-dimensional electron gas (2DEG). Additionally, it has a barrier layer of III-N semiconductor material that includes aluminum and nitrogen over the channel layer. Notably, the GaN FET is designed without a dielectric layer between the gate and the barrier layer, enhancing its performance.

Another significant patent involves a method of forming metal contacts in the barrier layer of a group III-N HEMT. This innovative process utilizes a first gas combination to etch metal contact openings in the barrier layer, followed by a second gas combination that etches further down to a depth above the channel layer.

Career Highlights

Wada is currently employed at Texas Instruments Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of gallium nitride transistors, which are crucial for various electronic applications.

Collaborations

Throughout his career, Wada has collaborated with notable colleagues, including Yoshikazu Kondo and Hiroshi Yamasaki. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Shoji Wada's contributions to semiconductor technology, particularly in gallium nitride-based transistors, highlight his role as a leading inventor in the field. His patents reflect a commitment to advancing technology and improving electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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