The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2017
Filed:
Aug. 15, 2016
Applicant:
Texas Instruments Incorporated, Dallas, TX (US);
Inventors:
Yoshikazu Kondo, Dallas, TX (US);
Shoji Wada, Plano, TX (US);
Hiroshi Yamasaki, Richardson, TX (US);
Masahiro Iwamoto, Oita, JP;
Assignee:
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 21/283 (2006.01); H01L 29/20 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/283 (2013.01); H01L 21/28575 (2013.01); H01L 21/30621 (2013.01); H01L 29/2003 (2013.01); H01L 29/41766 (2013.01); H01L 29/452 (2013.01);
Abstract
Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.