Kounan, Japan

Shoji Toyoshima

This inventor holds 4 USPTO granted patents. Top assignee: Nippondenso Co., Ltd.. Active years: 1987-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shoji Toyoshima. Retrieved from https://idiyas.com/inventor/shoji-toyoshima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 20(Granted Patents)


Location History:

  • Kounan, JP (1987)
  • Kohnan, JP (1996)
  • Konan, JP (1987 - 1997)

Company Filing History:


Years Active: 1987-1997

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4 patents (USPTO):Explore Patents

Title: The Innovations of Shoji Toyoshima

Introduction

Shoji Toyoshima is a notable inventor based in Kohnan, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the functionality and reliability of semiconductor devices.

Latest Patents

One of Toyoshima's latest patents is a semiconductor device that includes an overvoltage protection diode. This innovative device features a diode element designed to protect a transistor against overvoltage conditions. The design incorporates a first region of p-type conductivity on the upper surface of an n-type semiconductor substrate, where the base and emitter regions of the transistor are formed. Additionally, a second region of n.sup.+-type conductivity is created, which has a higher impurity concentration than the n-type substrate. An insulating film covers the upper surface of the semiconductor substrate, and a conductive film partially overlaps the first and second regions through this insulating layer. This configuration allows the first region to act as an anode, the second as a cathode, and the conductive film as a gate electrode, resulting in an effective overvoltage protection diode.

Another significant patent involves a device protecting layer. This layer consists of a UV transmissible SiN film, which is formed using a plasma CVD process. The composition ratio of Si/N is carefully controlled to fall within the range of 0.75 to 0.87. Furthermore, the Si--H bond concentration in the SiN film is optimized according to a specific formula, ensuring the film's effectiveness in protecting semiconductor devices.

Career Highlights

Shoji Toyoshima has built a successful career at Nippondenso Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His innovative designs and patents have contributed to the company's reputation as a leader in the industry.

Collaborations

Throughout his career, Toyoshima has collaborated with talented individuals such as Masami Yamaoka and Yukio Tsuzuki. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Shoji Toyoshima's contributions to the field of semiconductor devices are noteworthy and impactful. His innovative patents demonstrate his commitment to enhancing technology and protecting electronic components. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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