The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1987
Filed:
Feb. 01, 1985
Applicant:
Inventors:
Assignee:
Nippondenso Co., Ltd., Kariya, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 36 ; 357 34 ; 357 20 ;
Abstract
This application describes a semiconductor device having a power amplifier pattern consisting of a plurality of parallel-connected transistor unit cells with emitters thereof being arrayed like meshes, wherein the width of the emitter of each transistor unit cell is not in excess of 50 microns. The limitation of the emitter width contributes to enhancement of the reverse-bias breakdown endurance.
Tsuzuki, Yukio. (1987). Semiconductor device (U.S. Patent No. 4680608). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4680608
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