This inventor holds 1 USPTO granted patent and 5 published patent applications. Top assignee: Intel Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Shishir Pandya - Innovator in Semiconductor Technology
Introduction
Shishir Pandya is an inventor based in Hillsboro, OR (US). He is known for his contributions to semiconductor technology, particularly in the area of epitaxial transistors. Although he currently holds no granted patents, his innovative ideas are reflected in his latest patent applications.
Latest Patent Applications
1. **DOPANT ENGINEERING TO SUPPRESS EPITAXIAL MISSHAPENNESS IN N-TYPE EPITAXIAL SOURCE-DRAIN TRANSISTORS** - This application discusses methods, transistors, and systems related to forming epitaxial n-type source and drain materials on one or more semiconductor structures. The n-type source and drain materials include an n-type dopant in a bulk material. A first region of each of the n-type source and drain materials laterally adjacent to the one or more semiconductor structures has a lower n-type dopant concentration than a second region over the first region. The second region is formed by implanting the n-type dopant and subsequent anneal.
2. **INTEGRATED CIRCUIT STRUCTURES HAVING EPITAXIAL NUBS FOR UNIFORM GRID METAL GATE AND TRENCH CONTACT CUT** - This application describes integrated circuit structures having epitaxial nubs for uniform grid metal gate and trench contact cut. A structure includes a vertical stack of horizontal nanowires, with individual ones of the nanowires having a corresponding epitaxial source or drain structure at an end of the nanowire. The epitaxial source or drain structures are discontinuous with one another along the vertical stack of horizontal nanowires. A gate electrode is positioned over the vertical stack of horizontal nanowires, and a conductive trench contact is adjacent to the gate electrode, vertically surrounding individual ones of the epitaxial source or drain structures. A dielectric sidewall spacer is located between the gate electrode and the conductive trench contact. A dielectric cut plug structure extends through the gate electrode, through the dielectric sidewall spacer, and through the conductive trench contact.
Conclusion
Shishir Pandya is an innovative inventor whose work in semiconductor technology showcases his potential to contribute significantly to the field. His latest patent applications reflect his commitment to advancing technology in this area.