The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 19, 2026
Filed:
Aug. 17, 2022
Intel Corporation, Santa Clara, CA (US);
Patrick Wallace, Hillsboro, OR (US);
Robert Ehlert, Portland, OR (US);
Subrina Rafique, Beaverton, OR (US);
Peter Wells, Portland, OR (US);
Anand S. Murthy, Portland, OR (US);
Shishir Pandya, Hillsboro, OR (US);
Xiaochen Ren, Portland, OR (US);
Yulia Tolstova, Hillsboro, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
In an example, an integrated circuit structure includes a first vertical stack of horizontal nanowires laterally spaced apart from a second vertical stack of horizontal nanowires. An epitaxial source or drain structure is between the first and second vertical stacks of horizontal nanowires. The epitaxial source or drain structure includes a nucleation layer having a first portion in contact with the first vertical stack of horizontal nanowires and a second portion in contact with the second vertical stack of horizontal nanowires. The nucleation layer includes silicon with arsenic dopants. The epitaxial source or drain structure also includes an epitaxial fill layer laterally between the first and second portions of the nucleation layer. The epitaxial fill layer includes silicon with phosphorous dopants. The epitaxial fill layer has a total atomic concentration of arsenic less than half of a total atomic concentration of arsenic of the nucleation layer.