Company Filing History:
Years Active: 2025
Title: Innovations of Patrick M Wallace
Introduction
Patrick M Wallace is an accomplished inventor based in Hillsboro, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced transistors. With a total of 2 patents, Wallace's work is recognized for its innovative approaches to enhancing transistor performance.
Latest Patents
Wallace's latest patents include groundbreaking technologies such as "Gate structures to enable lower subthreshold slope in gallium nitride-based transistors." This invention describes a transistor that incorporates a substrate, buffer layer, channel layer, and polarization layers, all designed to optimize performance. Another notable patent is for "PGaN enhancement mode HEMTs with dopant diffusion spacer," which focuses on improving high electron mobility transistors (HEMTs) by utilizing a dopant diffusion spacer to enhance drive currents.
Career Highlights
Patrick M Wallace is currently employed at Intel Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the capabilities of gallium nitride-based transistors, which are crucial for modern electronic devices.
Collaborations
Throughout his career, Wallace has collaborated with notable colleagues such as Michael S Beumer and Robert Ehlert. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Patrick M Wallace's contributions to the field of semiconductor technology exemplify the spirit of innovation. His patents and ongoing work at Intel Corporation highlight his commitment to advancing technology for future applications.