The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Dec. 23, 2020
Intel Corporation, Santa Clara, CA (US);
Michael Beumer, Portland, OR (US);
Robert Ehlert, Portland, OR (US);
Nicholas Minutillo, Beaverton, OR (US);
Michael Robinson, Beaverton, OR (US);
Patrick Wallace, Portland, OR (US);
Peter Wells, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
III-N e-mode high electron mobility transistors (HEMTs) including a dopant diffusion spacer between an impurity-doped III-N material layer and a III-N polarization layer of the HEMT material stack. The spacer may be a substantially undoped III-N material, such as GaN. With the diffusion spacer, P-type impurities within the pGaN are setback from the polarization layer sufficiently to avoid significant levels of P-type impurities from entering the III-N material interface where the 2DEG resides. With the diffusion spacer, clustering of impurities near the 2DEG may be avoided and a III-N e-mode HEMT may achieve higher drive currents.