Michael S Beumer

Title: Innovations of Michael S. Beumer

Introduction

Michael S. Beumer is an accomplished inventor based in Portland, Oregon. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium nitride-based transistors. With a total of two patents to his name, Beumer's work is recognized for its innovative approaches to enhancing transistor performance.

Latest Patents

One of Beumer's latest patents focuses on gate structures designed to enable a lower subthreshold slope in gallium nitride-based transistors. This invention includes a substrate, a buffer layer, a channel layer, and one or more polarization layers made from a group III-N material. The design incorporates multiple p-type doped layers, each with a varying proportion of group III constituents, to optimize transistor efficiency. Another notable patent involves PGaN enhancement mode high electron mobility transistors (HEMTs) that utilize a dopant diffusion spacer. This spacer is strategically placed between an impurity-doped III-N material layer and a III-N polarization layer, allowing for improved drive currents by minimizing impurity clustering near the two-dimensional electron gas (2DEG) interface.

Career Highlights

Michael S. Beumer is currently employed at Intel Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in advancing the capabilities of high-performance transistors, which are critical for modern electronic devices.

Collaborations

Throughout his career, Beumer has collaborated with notable colleagues, including Robert Ehlert and Nicholas G. Minutillo. These partnerships have fostered a collaborative environment that enhances the innovation process.

Conclusion

Michael S. Beumer's contributions to the field of semiconductor technology exemplify the spirit of innovation. His patents reflect a commitment to advancing transistor technology, which plays a vital role in the electronics industry.