This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Innovations of Inventor Xiaochen Ren
Introduction
Xiaochen Ren is an emerging inventor based in Portland, OR (US). He is known for his innovative work in the field of integrated circuit structures. Although he currently holds no granted patents, his contributions to technology are noteworthy.
Latest Patent Applications
Xiaochen Ren's latest patent application is titled "Source or Drain Structures with Phosphorous and Arsenic Dopants." This application describes an integrated circuit structure that includes a first vertical stack of horizontal nanowires, which are laterally spaced apart from a second vertical stack of horizontal nanowires. The structure features an epitaxial source or drain structure positioned between these two stacks. The nucleation layer of this structure contains silicon with arsenic dopants, while the epitaxial fill layer includes silicon with phosphorous dopants. This innovative design aims to enhance the performance of integrated circuits.
Conclusion
Xiaochen Ren's work represents a significant step forward in the development of advanced integrated circuit technologies. His innovative ideas and applications have the potential to influence the future of electronics.