Shinji Sato

This inventor holds 19 USPTO granted patents, primarily in Non-Volatile Memory. Top assignees: Sandisk Technologies Inc., Sandisk Corporation. Active years: 2007-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shinji Sato. Retrieved from https://idiyas.com/inventor/shinji-sato-loa4ojm0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 19

% Patents Active = 57.9

Average Co-Inventor Count = 2.6

ph-index = 7

Forward Citations = 210(Granted Patents)

Location History:

Milpitas, CA (US) (2011)
Chigasaki, JP (2007 - 2016)

Company Filing History:

14 out of 4,966

Sandisk Technologies Inc.

Years Active: 2007-2016

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Areas of Expertise:

Non-Volatile Storage

Temperature Compensation

Multi-Level Cell

Channel Coupling

Select Gate Voltage

Leakage Current

Angular Doping

Bit-Line Pre-Charge

Floating Gate

Memory Array

NAND Blocks

19 patents (USPTO):Sort by Forward CitationsExplore Patents

1. RE45954 - Non-volatile storage with temperature compensation based on neighbor state information (2016-03-28),

2. RE45871 - Selected word line dependent select gate voltage during program (2016-01-25),

3. 9224457 - Non-volatile storage with temperature compensation based on neighbor state information (2015-12-29),

4. 9087601 - Select gate bias during program of non-volatile storage (2015-07-21),

5. 9036438 - Non-volatile storage with temperature compensation based on neighbor state information (2015-05-19),

6. 8885404 - Non-volatile storage system with three layer floating gate (2014-11-11),

7. 8804430 - Selected word line dependent select gate diffusion region voltage during programming (2014-08-12),

8. 8773902 - Channel boosting using secondary neighbor channel coupling in non-volatile memory (2014-07-08),

9. 8638608 - Selected word line dependent select gate voltage during program (2014-01-28),

10. 8503244 - Fabricating and operating a memory array having a multi-level cell region and a single-level cell region (2013-08-06),

11. 8354322 - Fabricating and operating a memory array having a multi-level cell region and a single-level cell region (2013-01-15),

12. 8213255 - Non-volatile storage with temperature compensation based on neighbor state information (2012-07-03),

13. 8163622 - Method for angular doping of source and drain regions for odd and even NAND blocks (2012-04-24),

14. 8026544 - Fabricating and operating a memory array having a multi-level cell region and a single-level cell region (2011-09-27),

15. 7902031 - Method for angular doping of source and drain regions for odd and even NAND blocks (2011-03-08),

Title: The Innovative Journey of Shinji Sato

Introduction: Shinji Sato, a pioneering inventor hailing from Chigasaki, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Shinji Sato's latest patents focus on advancements in renewable energy technologies, particularly in the field of solar power generation and energy storage solutions.

Career Highlights: With a career spanning over two decades, Shinji Sato has established himself as a leading figure in the renewable energy sector, holding multiple patents and receiving recognition for his innovative work.

Collaborations: Throughout his career, Shinji Sato has collaborated with top research institutions and leading technology companies to further develop and commercialize his inventions, showcasing his ability to work across diverse teams and disciplines.

Conclusion: Shinji Sato's relentless pursuit of innovation and his commitment to creating sustainable solutions have solidified his position as a trailblazer in the field of renewable energy, inspiring future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]