The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2014

Filed:

Mar. 26, 2012
Applicants:

Chun-hung Lai, Kamakura, JP;

Shinji Sato, Chigasaki, JP;

Shih-chung Lee, Yokohama, JP;

Gerrit Jan Hemink, Yokohama, JP;

Inventors:

Chun-Hung Lai, Kamakura, JP;

Shinji Sato, Chigasaki, JP;

Shih-Chung Lee, Yokohama, JP;

Gerrit Jan Hemink, Yokohama, JP;

Assignee:

SanDisk Technologies Inc., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01); G11C 16/10 (2006.01); G11C 16/06 (2006.01);
U.S. Cl.
CPC ...
G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/04 (2013.01); G11C 16/06 (2013.01);
Abstract

Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The voltage applied to a common source line may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction, which may prevent or reduce program disturb. The voltage applied to bit lines of unselected NAND strings may depend on the location of the word line that is selected for programming. This may prevent or reduce punch-through conduction.


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