Shin Yokoyama

Title: Innovations by Shin Yokoyama

Introduction

Shin Yokoyama is a prominent inventor based in Hiroshima, Japan. He has made significant contributions to the field of light-emitting elements and quantum dot manufacturing. With a total of eight patents to his name, Yokoyama's work is at the forefront of technological advancements.

Latest Patents

One of his latest patents is a light-emitting element that includes a n-type silicon oxide film and a p-type silicon nitride film. This innovative design forms a p-n junction, allowing for efficient light emission. The n-type silicon oxide film contains multiple quantum dots composed of n-type silicon, while the p-type silicon nitride film includes quantum dots made of p-type silicon. Light emission occurs at the boundary between these two films by injecting electrons from the n-type side and holes from the p-type side. Another notable patent is a method for manufacturing quantum dots, which involves depositing a silicon oxide film on a substrate using a plasma CVD method. This process includes rapid heating and cooling, achieving a temperature raising rate of 200°C/s and a heat treatment temperature of 1000°C.

Career Highlights

Shin Yokoyama is affiliated with Hiroshima University, where he conducts his research and development. His work has garnered attention for its innovative approach to light-emitting technologies and quantum dot applications.

Collaborations

Yokoyama collaborates with notable colleagues, including Yoshiteru Amemiya and Yuichiro Tanushi. Their combined expertise contributes to the advancement of their research projects.

Conclusion

Shin Yokoyama's contributions to the field of light-emitting elements and quantum dot manufacturing highlight his innovative spirit and dedication to advancing technology. His patents reflect a commitment to pushing the boundaries of what is possible in the realm of materials science.