The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Mar. 26, 2008
Shin Yokoyama, Higashihiroshima, JP;
Yoshiteru Amemiya, Higashihiroshima, JP;
Shin Yokoyama, Higashihiroshima, JP;
Yoshiteru Amemiya, Higashihiroshima, JP;
Hiroshima University, Hiroshima, JP;
Abstract
A light-emitting device includes an n-type silicon thin film (), a silicon thin film (), and a p-type silicon thin film (). The silicon thin film () is formed on the n-type silicon thin film () and the p-type silicon thin film () is formed on the silicon thin film (). The n-type silicon thin film (), the silicon thin film (), and the p-type silicon thin film () form a pin junction. The n-type silicon thin film () includes a plurality of quantum dots () composed of n-type Si. The silicon thin film () includes a plurality of quantum dots () composed of p-type Si. The p-type silicon thin film () includes a plurality of quantum dots () composed of p-type Si. Electrons are injected from the n-type silicon thin film () side and holes are injected from the p-type silicon thin film () side, whereby light is emitted at a silicon nitride film ().