The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Mar. 31, 2008
Shin Yokoyama, Higashihiroshima, JP;
Yoshiteru Amemiya, Higashihiroshima, JP;
Shin Yokoyama, Higashihiroshima, JP;
Yoshiteru Amemiya, Higashihiroshima, JP;
Hiroshima University, Higashihiroshima-shi, Hiroshima, JP;
Abstract
A silicon oxide film () comprising an amorphous phase is deposited on a substrate () (see a step (b)) by a plasma CVD method using an SiHgas and an NO gas. Subsequently, a sample comprising the silicon oxide film ()/the substrate () is set on an RTA apparatus. The sample (=the silicon oxide film ()/the substrate ()) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile