Hiroshima University

Shin Yokoyama

Yoshiteru Amemiya

Yuichiro Tanushi

Masato Suzuki

A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

Light-emitting element

A silicon oxide film () comprising an amorphous phase is deposited on a substrate () (see a step (b)) by a plasma CVD method using an SiHgas and an NO gas. Subsequently, a sample comprising the silicon oxide film ()/the substrate () is set on an RTA apparatus. The sample (=the silicon oxide film ()/the substrate ()) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200&#xb0; C./s, and a temperature in heat treatment is 1000&#xb0; C.

Method for manufacturing quantum dot

A light-emitting device includes an n-type silicon thin film (), a silicon thin film (), and a p-type silicon thin film (). The silicon thin film () is formed on the n-type silicon thin film () and the p-type silicon thin film () is formed on the silicon thin film (). The n-type silicon thin film (), the silicon thin film (), and the p-type silicon thin film () form a pin junction. The n-type silicon thin film () includes a plurality of quantum dots () composed of n-type Si. The silicon thin film () includes a plurality of quantum dots () composed of p-type Si. The p-type silicon thin film () includes a plurality of quantum dots () composed of p-type Si. Electrons are injected from the n-type silicon thin film () side and holes are injected from the p-type silicon thin film () side, whereby light is emitted at a silicon nitride film ().

Light-emitting device

Light-emitting device and method for manufacturing the same

Optical waveguides and optical transceivers are formed on one main surface of a semiconductor substrate. A light source is provided on one side surface of the semiconductor substrate, and emits light to the optical waveguides. In each of the optical transceivers, when a voltage is applied to a silicon layer, an optical resonator resonates with any one of the light components traveling through the optical waveguides, and emits the light component to an optical transmission member. In addition, in each of the optical transceivers, when a voltage is applied to the silicon layer, another optical resonators resonate with light traveling through the optical transmission member and emit the resonance light to photodetectors, respectively.

Optical integrated circuit apparatus

An input layer outputs light having a relatively narrow emission angle distribution to a middle layer as an output signal if the signal level of input signal is relatively high and outputs light having a relatively broad emission angle distribution to the middle layer as the output signal if the signal level of input signal is relatively low. The middle layer outputs light having a relatively narrow emission angle distribution as an output signal to an output layer if the signal level of the output signal from input layer is relatively high and outputs light having a relatively broad emission angle distribution to the output layer as an output signal if the signal level of the output signal from the input layer is relatively low.

Optical neural network

Optical waveguides and optical transmission/reception units are placed on one principal plane of a semiconductor substrate. A light source is placed on one end surface of the semiconductor substrate and guides generated light to the optical waveguides. In the optical transmission/reception units, each of optical resonant members optically resonates with partial light of one of light beams propagating in the optical waveguides and emits the partial light into an optical transmission member if voltage is applied thereto. In the optical transmission/reception units, each of another optical resonant members optically resonates with light propagating in the optical transmission member and emits the resonated light into a photodetector unit if voltage is applied thereto.

Growing community of inventors

Hiroshima, Japan

Shin Yokoyama