Hsinchu, Taiwan

Shin-Jang Shen

This inventor holds 25 USPTO granted patents, primarily in Semiconductor Memory. Top assignees: Macronix International Co., Ltd., National Tsing Hua University, Skymedi Corporation. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shin-Jang Shen. Retrieved from https://idiyas.com/inventor/shin-jang-shen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 5

Forward Citations = 100(Granted Patents)


Location History:

  • Changhua, TW (2005)
  • Jhubei, TW (2013 - 2015)
  • Hsinchu, TW (2007 - 2019)
  • Zhubei, TW (2012 - 2019)
  • HsinChu County, TW (2021)

Company Filing History:


Years Active: 2005-2026

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Areas of Expertise:
Semiconductor Devices
Flash Memory
3D Memory Array
Voltage Adjustment
Temperature Compensation
Charge Pump
Current-Sense Amplifier
Memory Architecture
Low-Offset Adjustment
Word Line Decoder
Boost Circuit
Level Shifter
25 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Shin-Jang Shen

Introduction:

Shin-Jang Shen, based in Hsinchu, Taiwan, is a prolific inventor with an impressive portfolio of 24 patents. His work is primarily focused on advancements in flash memory technology, which has significant implications for the electronics and storage industries.

Latest Patents:

Among his latest innovations are two notable patents that illustrate his expertise in flash memory systems. The first patent describes a "Flash memory and operation method thereof for controlling raising speed of the read pass voltage." This technology involves a flash memory structure with multiple memory cell strings and a specialized pass voltage generator. It enhances the read operation by managing the pass voltage in a way that optimizes performance while maintaining efficiency. The second patent, titled "Temperature compensation for unselected memory cells and string select switches in NAND flash memory," introduces a technique to improve the operational stability of NAND devices by applying temperature-responsive voltage variations, ensuring reliability under different conditions.

Career Highlights:

Shin-Jang Shen has made significant contributions to the field of memory technology during his tenure at prominent organizations. He worked at Macronix International Co., Ltd., where he contributed his expertise to the development of advanced memory solutions. Additionally, he has been affiliated with National Tsing Hua University, an institution known for its research contributions in engineering and technology.

Collaborations:

Throughout his career, Shen has collaborated with notable colleagues such as Chun-Hsiung Hung and Hang-Ting Lue. These professional relationships have likely fostered an environment of innovation and excellence, leading to groundbreaking advancements in their respective fields.

Conclusion:

Shin-Jang Shen's work in flash memory technology has not only underscored his innovative spirit but has also played a critical role in shaping modern memory solutions. With a strong academic background and impactful collaborations, his contributions continue to influence the electronics industry and inspire future advancements in memory technologies.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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