Company Filing History:

16 out of 3,595

Macronix International Co., Ltd.

Years Active: 2005-2021

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24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11056172 - Flash memory and operation method thereof for controlling raising speed of the read pass voltage (2021-07-06),

2. 10515707 - Temperature compensation for unselected memory cells and string select switches in NAND flash memory (2019-12-24),

3. 10325662 - Circuit and method for adjusting select gate voltage of non-volatile memory during erasure of memory cells based on a well voltage (2019-06-18),

4. 10243454 - Boost circuit (2019-03-26),

5. 9805803 - Circuit for adjusting a select gate voltage of a non-volatile memory during erasure of memory cells based on a well voltage (2017-10-31),

6. 9589642 - Level shifter and decoder for memory (2017-03-07),

7. 9461623 - Method and circuit for temperature dependence reduction of a RC clock circuit (2016-10-04),

8. 9391597 - Boost circuit (2016-07-12),

9. 9214471 - Memory architecture of 3D array with diode in memory string (2015-12-15),

10. 9024374 - 3D memory array with improved SSL and BL contact layout (2015-05-05),

11. 8947936 - Memory architecture of 3D array with diode in memory string (2015-02-03),

12. 8890233 - 3D memory array with improved SSL and BL contact layout (2014-11-18),

13. 8659944 - Memory architecture of 3D array with diode in memory string (2014-02-25),

14. 8638636 - Word line decoder circuit apparatus and method (2014-01-28),

15. 8531229 - Level shifting circuit (2013-09-10),

Title: Innovations and Contributions of Shin-Jang Shen

Introduction:

Shin-Jang Shen, based in Hsinchu, Taiwan, is a prolific inventor with an impressive portfolio of 24 patents. His work is primarily focused on advancements in flash memory technology, which has significant implications for the electronics and storage industries.

Latest Patents:

Among his latest innovations are two notable patents that illustrate his expertise in flash memory systems. The first patent describes a "Flash memory and operation method thereof for controlling raising speed of the read pass voltage." This technology involves a flash memory structure with multiple memory cell strings and a specialized pass voltage generator. It enhances the read operation by managing the pass voltage in a way that optimizes performance while maintaining efficiency. The second patent, titled "Temperature compensation for unselected memory cells and string select switches in NAND flash memory," introduces a technique to improve the operational stability of NAND devices by applying temperature-responsive voltage variations, ensuring reliability under different conditions.

Career Highlights:

Shin-Jang Shen has made significant contributions to the field of memory technology during his tenure at prominent organizations. He worked at Macronix International Co., Ltd., where he contributed his expertise to the development of advanced memory solutions. Additionally, he has been affiliated with National Tsing Hua University, an institution known for its research contributions in engineering and technology.

Collaborations:

Throughout his career, Shen has collaborated with notable colleagues such as Chun-Hsiung Hung and Hang-Ting Lue. These professional relationships have likely fostered an environment of innovation and excellence, leading to groundbreaking advancements in their respective fields.

Conclusion:

Shin-Jang Shen's work in flash memory technology has not only underscored his innovative spirit but has also played a critical role in shaping modern memory solutions. With a strong academic background and impactful collaborations, his contributions continue to influence the electronics industry and inspire future advancements in memory technologies.

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