Hsinchu, Taiwan

Shih Hsin Chen

This inventor holds 5 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shih Hsin Chen. Retrieved from https://idiyas.com/inventor/shih-hsin-chen-ny7fcwlj

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 40.0

Average Co-Inventor Count = 2.3

ph-index = 4

Forward Citations = 68(Granted Patents)


Company Filing History:


Years Active: 2015-2017

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5 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Inventor Shih Hsin Chen**

Introduction

Shih Hsin Chen, an esteemed inventor based in Hsin-Chu, Taiwan, has made significant strides in the field of semiconductor technology. With a total of five patents to his name, he is known for his innovative methodologies that enhance the efficiency and functionality of semiconductor arrangements. His work is a testament to the advancements in engineering and technology that drive the industry forward.

Latest Patents

Among his latest patents, Shih Hsin Chen has pioneered a **System and method for creating hybrid resistance and capacitance (RC) netlist using three-dimensional RC extraction and 2.5 dimensional RC extraction**. This patent describes a sophisticated method that involves generating a layout for a semiconductor arrangement, then performing a three-dimensional RC extraction on target unit cells to obtain vital results, including coupling capacitance. The integration of a 2.5D RC extraction for peripheral cells further adds to the patent's innovative blend of technologies, culminating in the creation of a hybrid RC netlist.

Additionally, he has developed **Methods for layout verification for polysilicon cell edge structures in FinFET standard cells using filters**. This patent outlines an advanced verification process that enhances the integrity of layout design workflows by filtering out unnecessary devices during the layout versus schematic comparison. By using standard cells defined with FinFET transistors and implementing polysilicon dummy structures strategically, Shih Hsin Chen's work improves the precision of semiconductor manufacturing processes.

Career Highlights

Shih Hsin Chen’s career is marked by his association with Taiwan Semiconductor Manufacturing Company Limited (TSMC), a leader in the semiconductor industry. His contributions to TSMC's technological advancements not only bolster the company's standing but also the overall progress in semiconductor design and fabrication.

Collaborations

Throughout his career, Shih Hsin Chen has collaborated with distinguished professionals, including Kai-Ming Liu and Ze-Ming Wu. These partnerships have enabled a dynamic exchange of ideas and innovations, facilitating the development of cutting-edge technologies within the semiconductor field.

Conclusion

Shih Hsin Chen exemplifies the spirit of innovation and technical expertise in the semiconductor industry. His patents reflect a deep understanding of the complexities involved in semiconductor design and manufacture, showcasing his ability to solve intricate problems with advanced solutions. As he continues to develop new technologies, his impact on the industry will undoubtedly inspire future generations of engineers and inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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