This inventor holds 6 USPTO granted patents and 4 EPO patents. Top assignee: Fuji Electric Co., Ltd.. Active years: 1994-2001.
Location History:
- Kanagawa, JP (1994)
- Kawasaki, JP (1996)
- Nagano, JP (1996 - 2001)
Company Filing History:
Years Active: 1994-2001
Title: Shigeyuki Obinata: Innovator in High Voltage Integrated Circuits
Introduction
Shigeyuki Obinata is a prominent inventor based in Nagano, Japan. He has made significant contributions to the field of high voltage integrated circuits, holding a total of 6 patents. His work has advanced the technology used in various electronic devices, showcasing his expertise and innovative spirit.
Latest Patents
Obinata's latest patents include groundbreaking inventions such as the high voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor. The high voltage integrated circuit features a first region of first conductivity type, a second region of second conductivity type, and a third region of first conductivity type. It also includes source and drain regions, as well as gate electrodes, all designed to enhance the performance of high voltage applications.
Career Highlights
Throughout his career, Shigeyuki Obinata has worked with notable companies, including Fuji Electric Co., Ltd. and Fuji Electric Systems Co., Ltd. His experience in these organizations has allowed him to develop and refine his innovative ideas, contributing to the advancement of technology in the industry.
Collaborations
Obinata has collaborated with esteemed colleagues such as Tatsuhiko Fujihira and Yukio Yano. These partnerships have fostered a creative environment that has led to the development of several important technologies in the field.
Conclusion
Shigeyuki Obinata's contributions to high voltage integrated circuits demonstrate his commitment to innovation and excellence in engineering. His patents and collaborations reflect a career dedicated to advancing technology and improving electronic systems.