The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 1994
Filed:
Jun. 09, 1992
Shigeyuki Obinata, Kanagawa, JP;
Fuji Electric Co., Ltd., Kanagawa, JP;
Abstract
A MOS semiconductor device is disclosed for monitoring the value of the current flowing through an element by outputting a sense signal. The semiconductor has a main unit element and a sense unit element formed in a semiconductor layer, and the current flowing through the sense unit element is proportional to the current flowing through the main unit element. Both the main unit element and the sense unit element have a base region, a source region, a gate electrode, and a source electrode. A doped region of the same conductivity type as the base regions is formed in the semiconductor layer between the base regions of the main unit element and the sense unit element. This doped region is in contact with the source electrode of the main unit element. This structure decreases the power loss due to the sense signal current and ensures a linear relationship between the sense signal current and the main current.