The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 1996
Filed:
Oct. 12, 1994
Fuji Electric Co., Ltd., Kawasaki, JP;
Abstract
An insulated-gate bipolar transistor is formed of a number of cells integrally formed on a semiconductor substrate. The cells includes main cells with emitter electrodes, and current detection sensing cells situated adjacent to the main cells. Emitter electrodes are formed in an area of the sensing cells to be separated from the emitter electrodes of the main cells, and an overcurrent protection circuit is connected to the emitter electrodes of the sensing cells. When shorting accident occurs, an overcurrent protecting operation is performed such that an overcurrent is accurately detected through the sensing cells and a main current flowing through the main cells is made smaller than a short-circuit withstanding capacity of the IGBT by gate control of the protection circuit.