Hyogo, Japan

Shigeo Nagao


Average Co-Inventor Count = 2.1

ph-index = 4

Forward Citations = 58(Granted Patents)


Company Filing History:


Years Active: 1991-1993

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4 patents (USPTO):Explore Patents

Title: **Shigeo Nagao: Innovator in Semiconductor Technology**

Introduction

Shigeo Nagao is a distinguished inventor based in Hyogo, Japan, renowned for his contributions to the semiconductor industry. With a total of four patents to his name, Nagao's innovative techniques have significantly enhanced the manufacturing processes of semiconductor devices.

Latest Patents

Among his latest patents, Nagao has developed a "Method of Manufacturing Semiconductor Device Including Interlaying." This invention details a method for forming an interlayer insulating film that effectively insulates conductor patterns within semiconductor devices. It involves the preparation of a reaction gas that combines ozone and silicon alkoxide, with a specific ratio being maintained. The method employs chemical vapor deposition (CVD) under atmospheric pressure at temperatures between 350°C and 450°C to create an insulating film from the reaction gas.

Another significant patent attributed to him is the "Method of Forming Isolation Region in Semiconductor Device." This method outlines a systematic approach to creating isolation regions within a semiconductor device. Key steps include forming an underlying oxide film on a substrate, applying a polysilicon layer and a silicon nitride film, and patterning the nitride film to define circuit element regions. This process culminates in the formation of silicon oxide isolation regions through thermal oxidation, leveraging the patterned nitride film as a mask.

Career Highlights

Shigeo Nagao is employed at Mitsubishi Electric Corporation, a renowned company in the field of electronics and semiconductor solutions. His expertise and inventive spirit have positioned him as a leading figure in the company, contributing to cutting-edge technology development and advancements.

Collaborations

Throughout his career, Nagao has had the privilege of working alongside talented individuals like Masazumi Matsuura and Hideo Kotani. Their collaborative efforts have fostered innovation and growth within the semiconductor sector, leading to the development of quality products that meet the needs of the market.

Conclusion

Shigeo Nagao's contributions to semiconductor technology through his inventive methodologies and collaboration with peers underscore his significance as an inventor. As the semiconductor industry continues to evolve, the impact of his patented innovations remains vital to advancing the field.

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