The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 1991
Filed:
Nov. 01, 1988
Applicant:
Inventors:
Hiroji Ozaki, Hyogo, JP;
Shigeo Nagao, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
437164 ; 437 41 ; 437 44 ; 437141 ; 437149 ; 437150 ; 437152 ; 437153 ; 437154 ; 437160 ; 437168 ; 437162 ;
Abstract
An improved method for manufacturing P type semiconductor device such as used for memories is disclosed. Channeling such as caused by an ion implantation process is prevented by adopting a diffusion method to diffuse boron (7) from a boron glass formed on a layer of polysilicon or silicon oxide on a semiconductor substrate. This method provides a semiconductor device with shallow P type impurity diffusion regions.