The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 1993
Filed:
Mar. 25, 1992
Masazumi Matsuura, Hyogo, JP;
Hideo Kotani, Hyogo, JP;
Atsuhiro Fujii, Hyogo, JP;
Shigeo Nagao, Hyogo, JP;
Hideki Genjo, Hyogo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350.degree. C.- 450.degree. C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.