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For the Inventor, By the Inventor

Tokyo, Japan

Shigeki Obayashi

This inventor holds 23 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Technology. Top assignees: Renesas Electronics Corporation, Renesas Technology Corp., Renesas Electronics Corportion. Active years: 2009-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeki Obayashi. Retrieved from https://idiyas.com/inventor/shigeki-obayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 23 

% Patents Active = 91.3

Average Co-Inventor Count = 3.7

ph-index = 8

Forward Citations = 291(Granted Patents)


Location History:

  • Kanagawa, JP (2014 - 2018)
  • Tokyo, JP (2009 - 2021)

Company Filing History:

goldMedal18 out of 7,654 
 
Renesas Electronics Corporation
 patents
silverMedal4 out of 3,781 
 
Renesas Technology Corp.
 patents
bronzeMedal1 out of 3 
 
Renesas Electronics Corportion
 patents

Years Active: 2009-2021

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Areas of Expertise:
Semiconductor Device
Memory Device
Electric Fuse
Low Power Consumption
Signal Generation Circuit
Temperature Sensor
Integrated Circuit
Resistance Value
23 patents (USPTO):Explore Patents
1. 10923419 - Semiconductor device and a method of increasing a resistance value of an electric fuse (2021-02-16),
2. 10371582 - Signal generation circuit and temperature sensor (2019-08-06),
3. 10242733 - Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage (2019-03-26),
4. 9984744 - Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage (2018-05-29),
5. 9893013 - Semiconductor device and a method of increasing a resistance value of an electric fuse (2018-02-13),
6. 9891116 - Signal generation circuit and temperature sensor (2018-02-13),
7. 9767893 - Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage (2017-09-19),
8. 9508641 - Semiconductor device and a method increasing a resistance value of an electric fuse (2016-11-29),
9. 9496028 - Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage (2016-11-15),
10. 9218873 - Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage (2015-12-22),
11. 8723291 - Semiconductor integrated circuit (2014-05-13),
12. 8681527 - Semiconductor device (2014-03-25),
13. 8630142 - Semiconductor memory device that can stably perform writing and reading without increasing current consumption even with a low power supply voltage (2014-01-14),
14. 8558343 - Semiconductor device having a fuse element (2013-10-15),
15. 8487403 - Semiconductor device (2013-07-16),

Title: Shigeki Obayashi - Pioneering Inventor from Tokyo

Introduction: Shigeki Obayashi is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Shigeki Obayashi holds several patents in the areas of robotics, artificial intelligence, and sustainable energy solutions, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Shigeki Obayashi has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant advancements in various industries.

Collaborations: Throughout his career, Shigeki Obayashi has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing.

Conclusion: Shigeki Obayashi's passion for pushing the boundaries of technology and his relentless pursuit of excellence make him a true trailblazer in the world of inventions and patents.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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