Setagaya, Japan

Shigekazu Okumura

USPTO Granted Patents = 12 


Average Co-Inventor Count = 1.8

ph-index = 2

Forward Citations = 9(Granted Patents)


Location History:

  • Kawasaki, JP (2011 - 2015)
  • Setagaya, JP (2016 - 2021)

Company Filing History:


Years Active: 2011-2021

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12 patents (USPTO):Explore Patents

Title: Shigekazu Okumura: Innovator in Semiconductor Technology

Introduction

Shigekazu Okumura is a prominent inventor based in Setagaya, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on the development of advanced semiconductor materials and devices.

Latest Patents

Among his latest patents are innovations related to semiconductor crystal substrates and infrared detectors. One notable patent describes a semiconductor crystal substrate that includes a crystal substrate formed of materials such as GaSb or InAs. This substrate features a first buffer layer with n-type conductivity and a second buffer layer with p-type conductivity. Another patent outlines a similar semiconductor crystal substrate but with the first buffer layer having p-type conductivity and the second buffer layer having n-type conductivity. These advancements are crucial for improving the performance of infrared detectors.

Career Highlights

Shigekazu Okumura is currently employed at Fujitsu Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing new materials and methods that enhance the efficiency and functionality of semiconductor devices.

Collaborations

He has collaborated with notable colleagues such as Shuichi Tomabechi and Ryo Suzuki, contributing to various projects that advance semiconductor research and development.

Conclusion

Shigekazu Okumura's innovative work in semiconductor technology has led to significant advancements in the field. His contributions continue to shape the future of electronic devices and materials.

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