The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Dec. 15, 2020
Applicant:
Fujitsu Limited, Kawasaki, JP;
Inventors:
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/205 (2006.01); H01L 35/26 (2006.01); H01S 5/343 (2006.01); H01L 29/78 (2006.01); G01J 1/02 (2006.01); H01L 27/146 (2006.01); H01L 33/00 (2010.01); H01L 27/144 (2006.01); H01L 31/10 (2006.01); H01L 21/20 (2006.01); H01L 21/203 (2006.01); G01J 1/04 (2006.01); G01J 1/44 (2006.01); H01L 21/28 (2006.01); H01L 29/15 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/0392 (2006.01); H01L 31/18 (2006.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/30 (2010.01); H01L 35/18 (2006.01); H01L 35/32 (2006.01); H01L 35/34 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02502 (2013.01); G01J 1/02 (2013.01); G01J 1/0407 (2013.01); G01J 1/44 (2013.01); H01L 21/02398 (2013.01); H01L 21/02466 (2013.01); H01L 21/02546 (2013.01); H01L 21/02549 (2013.01); H01L 21/02631 (2013.01); H01L 21/20 (2013.01); H01L 21/203 (2013.01); H01L 21/28264 (2013.01); H01L 27/144 (2013.01); H01L 27/146 (2013.01); H01L 27/1467 (2013.01); H01L 27/14694 (2013.01); H01L 29/157 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7785 (2013.01); H01L 29/78 (2013.01); H01L 31/0304 (2013.01); H01L 31/0392 (2013.01); H01L 31/035236 (2013.01); H01L 31/10 (2013.01); H01L 31/184 (2013.01); H01L 33/00 (2013.01); H01L 33/0062 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/30 (2013.01); H01L 35/18 (2013.01); H01L 35/26 (2013.01); H01L 35/32 (2013.01); H01L 35/34 (2013.01); H01S 5/22 (2013.01); H01S 5/343 (2013.01);
Abstract
A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.