Fujitsu Corporation

Shigekazu Okumura

Shuichi Tomabechi

Ryo Suzuki

Mitsuru Ekawa

Ayahito Uetake

Tsuyoshi Yamamoto

Manabu Matsuda

Kan Takada

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including GaSb or InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, the first buffer layer having n-type conductivity, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb, the second buffer layer having p-type conductivity.

Semiconductor crystal substrate, infrared detector, and method for producing semiconductor crystal substrate

A semiconductor crystal substrate includes a crystal substrate that is formed of a material including one of GaSb and InAs, a first buffer layer that is formed on the crystal substrate and formed of a material including GaSb, and a second buffer layer that is formed on the first buffer layer and formed of a material including GaSb. The first buffer layer has a p-type conductivity, and the second buffer layer has an n-type conductivity.

Semiconductor crystal substrate, infrared detector, method for producing semiconductor crystal substrate, and method for producing infrared detector

An infrared detector includes a pixel separation wall. The infrared detector includes a semiconductor crystal substrate; a first contact layer formed on the semiconductor crystal substrate, a pixel separation wall formed on the first contact layer and configured to separate pixels; a buffer layer formed on the first contact layer and on a side surface of the pixel separation wall in a region surrounded by the pixel separation wall, an infrared-absorbing layer formed on the buffer layer, a second contact layer formed on the infrared-absorbing layer, an upper electrode formed on the second contact layer, and a lower electrode formed on the first contact layer. The buffer layer and the first contact layer are formed of a compound semiconductor of a first conductivity type. The pixel separation wall and the second contact layer are formed of a compound semiconductor of a second conductivity type.

Infrared detector, infrared detection device, and method of manufacturing infrared detector

An infrared detection device includes a semiconductor substrate; a first metamorphic buffer layer that is formed on the semiconductor substrate; a first contact layer that is formed on the first metamorphic buffer layer; a first infrared absorption layer that is formed on the first contact layer; a second contact layer that is formed on the first infrared absorption layer; a second metamorphic buffer layer that is formed on the second contact layer; a third contact layer that is formed on the second metamorphic buffer layer; a second infrared absorption layer that is formed on the third contact layer; a fourth contact layer that is formed on the second infrared absorption layer; a lower electrode that is connected with the first contact layer; an upper electrode that is connected with the fourth contact layer; and an intermediate electrode that is connected with the second contact layer and the third contact layer.

Infrared detection device, infrared detection apparatus, and manufacturing method of infrared detection device

An infrared detector includes, a substrate, a lower contact layer formed on the substrate, a first light receiving layer that is formed on the lower contact layer and has a quantum well structure, an intermediate contact layer formed on the first light receiving layer, a second light receiving layer that is formed on the intermediate contact layer and has a quantum well structure, and an upper contact layer formed on the second light receiving layer. Each of the first light receiving layer and the second light receiving layer includes, a first semiconductor layer that is doped with a first conductivity-type impurity, and a second semiconductor layer that is formed on the first semiconductor layer, and is doped with a second conductivity-type impurity which compensates the first conductivity-type impurity.

Infrared detector, imaging device, imaging system, and method of manufacturing infrared detector

The present invention pertains to a semiconductor light-receiving element and a method for manufacturing the same, enabling operation in a wide wavelength bandwidth and achieving fast response and high response efficiency. A PIN type photodiode made by sequentially layering on top of the substrate a Si layer of a first conductivity type, a non-doped Ge layer and a Ge layer of a second conductivity type that is the opposite type of the first conductivity type and a Ge current-blocking mechanism is provided in at least part of the periphery of the PIN type photodiode.

Semiconductor light-receiving element and method for manufacturing same

A semiconductor optical integrated device includes a first semiconductor optical device formed over a (001) plane of a substrate and a second semiconductor optical device which is formed over the (001) plane of the substrate in a (110) orientation from the first semiconductor optical device and which is optically connected to the first semiconductor optical device. The first semiconductor optical device includes a first core layer and a first clad layer which is formed over the first core layer and which has a crystal surface on a side on a second semiconductor optical device side that forms an angle &#x3b8; greater than or equal to 55 degrees and less than or equal to 90 degrees with the (001) plane.

Semiconductor optical integrated device and method for fabricating the same

An optical semiconductor device includes an active layer, a first semiconductor layer formed above the active layer and made from a semiconductor material containing Al, a second semiconductor layer formed above the first semiconductor layer and made from a semiconductor material which does not contain any one of Al and P and whose band gap is greater than that of the active layer, and a third semiconductor layer formed above the second semiconductor layer and made from a semiconductor material which does not contain Al but contains P. The second semiconductor layer is formed such that the first semiconductor layer and the third semiconductor layer do not contact with each other.

Growing community of inventors

Setagaya, Japan

Shigekazu Okumura