The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2016
Filed:
Oct. 16, 2015
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Shigekazu Okumura, Setagaya, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01); H01L 31/105 (2006.01); G02B 6/122 (2006.01); H01L 31/0232 (2014.01); H01L 31/028 (2006.01); H01L 31/0352 (2006.01); H01L 31/109 (2006.01); H01L 31/18 (2006.01); H04J 14/02 (2006.01);
U.S. Cl.
CPC ...
H01L 31/105 (2013.01); G02B 6/1228 (2013.01); H01L 31/028 (2013.01); H01L 31/02327 (2013.01); H01L 31/035281 (2013.01); H01L 31/109 (2013.01); H01L 31/1804 (2013.01); H01L 31/1864 (2013.01); H04J 14/02 (2013.01);
Abstract
The present invention pertains to a semiconductor light-receiving element and a method for manufacturing the same, enabling operation in a wide wavelength bandwidth and achieving fast response and high response efficiency. A PIN type photodiode made by sequentially layering on top of the substrate a Si layer of a first conductivity type, a non-doped Ge layer and a Ge layer of a second conductivity type that is the opposite type of the first conductivity type and a Ge current-blocking mechanism is provided in at least part of the periphery of the PIN type photodiode.