Kanagawa, Japan

Shigeharu Monoe

This inventor holds 23 USPTO granted patents, primarily in Semiconductor Manufacturing. Top assignee: Semiconductor Energy Laboratory Co., Ltd.. Active years: 2005-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeharu Monoe. Retrieved from https://idiyas.com/inventor/shigeharu-monoe

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 13.0

Average Co-Inventor Count = 2.5

ph-index = 8

Forward Citations = 249(Granted Patents)


Location History:

  • Kanagawa-Ken, JP (2008)
  • Kanagawa, JP (2005 - 2009)
  • Tochigi, JP (2009 - 2012)
  • Atsugi, JP (2009 - 2014)

Company Filing History:


Years Active: 2005-2014

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Areas of Expertise:
Semiconductor Device
Wiring Over Substrate
Etching Method
Light-Emitting Apparatus
LDD Region
Conductive Layer
Manufacturing Method
Display Element
Substrate
Semiconductor Packaging
Thermal Management
3D Stacking
23 patents (USPTO):Explore Patents

Title: Innovations in Semiconductor Technology by Shigeharu Monoe

Introduction: Shigeharu Monoe, based in Kanagawa, Japan, is a notable inventor with a strong focus on semiconductor technology, holding a total of 23 patents. His work in this dynamic industry has contributed significantly to advancements in semiconductor devices and manufacturing processes.

Latest Patents: Among his recent patents, Shigeharu Monoe developed inventions addressing critical challenges in semiconductor fabrication. One of his latest patents is for a wiring over a substrate that reduces particle generation between wirings and prevents short-circuiting due to significant variations in projection and depression. This innovative wiring method also protects the insulating layer from cracking due to stress at the edges of wirings. The manufacturing method includes a series of careful steps, such as forming various conductive layers and mask patterns, ensuring a selective ratio that promotes performance and reliability.

Another patent involves a semiconductor device designed to minimize damage to elements like transistors when the device experiences external bending forces. This semiconductor device contains carefully structured layers, including a channel formation region and impurity regions, aimed at maintaining structural integrity while enhancing functionality.

Career Highlights: Shigeharu Monoe has made significant contributions to semiconductor research and development while working at Semiconductor Energy Laboratory Co., Ltd. His career is marked by a commitment to innovating and improving semiconductor technologies, which has been instrumental in the advancement of modern electronics.

Collaborations: Within the Semiconductor Energy Laboratory, Shigeharu collaborates with esteemed colleagues such as Shinya Sasagawa and Takashi Yokoshima. Their collective expertise has fostered an environment of innovation, resulting in patents that push the boundaries of semiconductor applications.

Conclusion: Shigeharu Monoe's innovative contributions to semiconductor technology have not only resulted in numerous patents but have also solidified his reputation as a key player in the field. His dedication to improving manufacturing processes and device reliability continues to shape the future of electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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