The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 05, 2010
Filed:
Jun. 21, 2006
Hideto Ohnuma, Kanagawa, JP;
Shigeharu Monoe, Tochigi, JP;
Hideto Ohnuma, Kanagawa, JP;
Shigeharu Monoe, Tochigi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
To provide a manufacturing method in which LDD regions with different widths are formed in a self-aligned manner, and the respective widths are precisely controlled in accordance with each circuit. By using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function formed of a diffraction grating pattern or a semi-transparent film, the width of a region with a small thickness of a gate electrode can be freely set, and the widths of two LDD regions capable of being formed in a self-aligned manner with the gate electrode as a mask can be different in accordance with each circuit. In one TFT, both of two LDD regions with different widths overlap a gate electrode.