The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 21, 2009
Filed:
Dec. 22, 2005
Akihiro Ishizuka, Kanagawa, JP;
Satoru Okamoto, Kanagawa, JP;
Shigeharu Monoe, Tochigi, JP;
Shunpei Yamazaki, Tokyo, JP;
Akihiro Ishizuka, Kanagawa, JP;
Satoru Okamoto, Kanagawa, JP;
Shigeharu Monoe, Tochigi, JP;
Shunpei Yamazaki, Tokyo, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-Ken, JP;
Abstract
The present invention relates to a method for manufacturing a semiconductor film, including the steps of forming a transparent conductive film, forming a first conductive film over the transparent conductive film, forming a second conductive film over the first conductive film, etching the second conductive film with a gas including chlorine, and etching the first conductive film with a gas including fluorine. During etching of the second conductive film with a gas including chlorine, the transparent conductive film is protected by the first conductive film. During etching of the first conductive film with the gas including fluorine, the transparent conductive film does not react with the gas including fluorine. Therefore, no particle is formed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile