Shigeaki Kishida

Title: Shigeaki Kishida: Innovator in Plasma Control and Thin Film Transistors

Introduction

Shigeaki Kishida is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the fields of plasma control systems and thin film transistors. With a total of six patents to his name, Kishida's work showcases his expertise and innovative spirit.

Latest Patents

Kishida's latest patents include a plasma control system and a plasma control program. The plasma control system comprises a high-frequency power supply, an antenna group with multiple antennas, and reactance variable elements. It also features a current detection mechanism that monitors the current flowing through the antennas, a uniformity calculation unit for assessing current uniformity, and a reactance changing unit that adjusts reactance to achieve a desired uniformity index value. Another notable patent is a method for producing a thin film transistor. This method involves forming an oxide semiconductor layer on a gate insulating layer through a two-step sputtering process, utilizing argon and a mixed gas of argon and oxygen.

Career Highlights

Throughout his career, Kishida has worked with notable companies such as Nissin Electric Co., Ltd. and Emd Corporation. His experience in these organizations has contributed to his development as an inventor and innovator in his field.

Collaborations

Kishida has collaborated with several professionals, including Daisuke Matsuo and Takashi Mikami. These partnerships have likely enriched his work and expanded his contributions to technology.

Conclusion

Shigeaki Kishida's innovative work in plasma control systems and thin film transistors highlights his significant impact on technology. His patents reflect a deep understanding of complex systems and a commitment to advancing the field.