Nissin Electric Co., Ltd.

Emd Corporation

Shigeaki Kishida

Daisuke Matsuo

Yasunori Ando

Kiyoshi Ogata

Takashi Mikami

Yoshitaka Setoguchi

Eiji Takahashi

Hiroya Kirimura

Yuichi Setsuhara

Tsukasa Hayashi

Atsushi Tomyo

Kenji Kato

Tsubasa Iwakoke

The present invention comprises: a high-frequency power supply; an antenna group having a plurality of antennas connected to the high-frequency power supply; a plurality of reactance variable elements connected to the feeding sides and the grounding sides of the plurality of antennas; a current detection mechanism which detects the current flowing through the feeding sides and the ground sides of the plurality of antennas; a uniformity calculation unit which calculates the uniformity index value of the current flowing through the plurality of antennas, on the basis of the current value detected by the current detection mechanism; and a reactance changing unit which sequentially changes the reactance of the plurality of reactance variable elements such that the uniformity index value calculated by the uniformity calculation unit approaches a predetermined set value.

Plasma control system and plasma control program

Provided is a method for producing a thin film transistor that has a gate electrode, a gate insulating layer, an oxide semiconductor layer, a source electrode and a drain electrode on a substrate. This method for producing a thin film transistor includes a step for forming the oxide semiconductor layer on the gate insulating layer by performing sputtering on a target with plasma. The step for forming the oxide semiconductor layer includes: a first film formation step in which only argon is supplied as a sputtering gas to perform sputtering; and a second film formation step in which a mixed gas of argon and oxygen is supplied as the sputtering gas to perform sputtering. A bias voltage applied to the target is a negative voltage of &#x2212;1 kV or higher.

Method for producing thin film transistor

The purpose of the present invention is to improve uniformity of film deposition by a plasma-based sputtering device. Provided is a sputtering devicefor depositing a film on a substrate W through sputtering of targets T by using plasma P, said sputtering device being provided with a vacuum chamberwhich can be evacuated to a vacuum and into which a gas is to be introduced; a substrate holding partfor holding the substrate W inside the vacuum chamber; target holding partsfor holding the targets T inside the vacuum chamber; multiple antennaswhich are arranged along a surface of the substrate W held by the substrate holding partand generate plasma P; and a reciprocal scanning mechanismfor scanning back and forth the substrate holding partalong the arrangement direction X of the multiple antennas

Sputtering device

The apparatus includes: a vacuum container; a substrate-holding part inside the vacuum container; a target-holding part inside the vacuum container; and a plurality of antennas having a flow channel through which a cooling liquid flows. The antennas include: at least two tubular conductor elements; a tubular insulating element that is arranged between mutually adjacent conductor elements and insulates the conductor elements; and a capacitive element that is connected electrically in series to the mutually adjacent conductor elements. The capacitive element includes: a first electrode which is connected electrically to one of the mutually adjacent conductor elements; a second electrode which is connected electrically to the other of the mutually adjacent conductor elements and is disposed facing the first electrode; and a dielectric substance that fills the space between the first electrode and the second electrode. The dielectric substance is a cooling liquid.

Sputtering apparatus

There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber () provided with a silicon sputter target (e.g., target), or the hydrogen gas and the silane-containing gas are supplied into the chamber () without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/H&#x3b2;) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity H&#x3b2; of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

Silicon dot forming method and silicon dot forming apparatus

There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.

Growing community of inventors

Kyoto, Japan

Shigeaki Kishida