Shi Ya Phyllis Lim

Title: Innovations by Shi Ya Phyllis Lim

Introduction

Shi Ya Phyllis Lim is a notable inventor based in Singapore, SG. She has made significant contributions to the field of integrated circuits and LDMOS transistor structures. With a total of 2 patents, her work has advanced the technology in this area.

Latest Patents

Her latest patents include innovative designs for LDMOS transistor structures and integrated circuits that incorporate these structures. One exemplary patent describes an integrated circuit featuring a substrate with distinct regions, including a bulk layer and an insulator layer. This design allows for a gate structure that oversees a channel region formed in the semiconductor layer. Additionally, the integrated circuit includes a well contact region, a source region, and a drain region, with a drift region situated between the drain region and the gate structure. Another patent outlines methods for fabricating LDMOS transistor structures, detailing the process of creating a semiconductor-on-insulator substrate and forming the necessary regions and contacts.

Career Highlights

Shi Ya Phyllis Lim is currently employed at Globalfoundries Singapore Pte. Ltd., where she continues to innovate in her field. Her work has been instrumental in developing advanced semiconductor technologies that are crucial for modern electronics.

Collaborations

She collaborates with talented coworkers, including Ming Zhu and Pinghui Li, who contribute to her projects and research endeavors.

Conclusion

Shi Ya Phyllis Lim's contributions to the field of integrated circuits and LDMOS transistor structures highlight her role as a leading inventor in Singapore. Her patents reflect her innovative spirit and commitment to advancing technology.