This inventor holds 2 USPTO granted patents and 2 published patent applications and 1 EPO patent. Top assignees: Gm Global Technolgoy Operations, Inc., Chinese Academy of Sciences. Active years: 2008-2012.
Company Filing History:
2 out of 31,896 
1 out of 3,346 
Years Active: 2008-2012
Title: Innovations of Shengqiang Bai in Thermoelectric Materials
Introduction
Shengqiang Bai is a notable inventor based in Shanghai, China. He has made significant contributions to the field of thermoelectric materials, holding 2 patents that showcase his innovative approach to material science.
Latest Patents
One of his latest patents involves a thermoelectric material that includes a multiple transition metal-doped type I clathrate crystal structure. This material is represented by the formula ATMTM...TMMX, where A can be barium, strontium, or europium, and X can be silicon, germanium, or tin. The transition metals (TM) are selected from 3d, 4d, and 5d categories, with specific compositions derived from a detailed equation involving charge states. Another patent details a method for fabricating a CoSb-based thermoelectric device, which includes the formation of composite n-type and p-type layers and the use of high-temperature and low-temperature electrodes.
Career Highlights
Shengqiang Bai has worked with prominent organizations such as Gm Global Technology Operations, Inc. and the Chinese Academy of Sciences. His experience in these institutions has allowed him to develop and refine his expertise in thermoelectric materials.
Collaborations
He has collaborated with notable coworkers, including Lidong Chen and Jihui Yang, contributing to advancements in their respective fields.
Conclusion
Shengqiang Bai's work in thermoelectric materials exemplifies innovation and dedication to scientific advancement. His patents reflect a deep understanding of material properties and their applications in technology.