The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2008
Filed:
Apr. 01, 2005
Lidong Chen, Shanghai, CN;
Junfeng Fan, Shanghai, CN;
Shengqiang Bai, Shanghai, CN;
Jihui Yang, Lakeshore, CA;
Lidong Chen, Shanghai, CN;
Junfeng Fan, Shanghai, CN;
Shengqiang Bai, Shanghai, CN;
Jihui Yang, Lakeshore, CA;
GM Global Technology Operations, Inc., Detroit, MI (US);
Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, CN;
Abstract
A method of fabricating a CoSb-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.