The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
May. 01, 2009
Jihui Yang, Lakeshore, CA;
Xun Shi, Troy, MI (US);
Shengqiang Bai, Shanghai, CN;
Wenqing Zhang, Shanghai, CN;
Lidong Chen, Shanghai, CN;
Jiong Yang, Shanghai, CN;
Jihui Yang, Lakeshore, CA;
Xun Shi, Troy, MI (US);
Shengqiang Bai, Shanghai, CN;
Wenqing Zhang, Shanghai, CN;
Lidong Chen, Shanghai, CN;
Jiong Yang, Shanghai, CN;
GM Global Technology Operations LLC, Detroit, MI (US);
Abstract
A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula ATMTM. . . TMMX. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM, TM, and TMare independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y, y, yand Z are actual compositions of TM, TM, TM, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·q−|Δq|y−|Δq|y− . . . −|Δq|y, wherein qis a charge state of A, and wherein Δq, Δq, Δqare, respectively, the nominal charge state of the first, second, and n-th TM.