Gm Global Technolgoy Operations, Inc.

Chinese Academy of Sciences

Corning Incorporated

Shengqiang Bai

Li Wang

Jihui Yang

Lidong Chen

Xun Shi

Wenqing Zhang

Jiong Yang

Wenbin Zhang

Junfeng Fan

A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula ATMTM. . . TMMX. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM, TM, and TMare independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y, y, yand Z are actual compositions of TM, TM, TM, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8&#xb7;q&#x2212;|&#x394;q|y&#x2212;|&#x394;q|y&#x2212; . . . &#x2212;|&#x394;q|y, wherein qis a charge state of A, and wherein &#x394;q, &#x394;q, &#x394;qare, respectively, the nominal charge state of the first, second, and n-th TM.

Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure

A method of fabricating a CoSb-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.

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Shengqiang Bai