Hsinchu, Taiwan

Sheng-Hsiung Yang

This inventor holds 8 USPTO granted patents. Top assignee: United Microelectronics Corp.. Active years: 2000-2007.


% Patents Active = 100.0

Average Co-Inventor Count = 1.3

ph-index = 5

Forward Citations = 144(Granted Patents)


Company Filing History:


Years Active: 2000-2007

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8 patents (USPTO):Explore Patents

Title: Innovations of Sheng-Hsiung Yang

Introduction

Sheng-Hsiung Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on methods for fabricating integrated circuits, particularly in high-voltage and low-voltage devices.

Latest Patents

One of his latest patents is a method for fabricating integrated circuits that incorporate both high voltage and low voltage devices. This innovative process ensures compatibility between high-voltage semiconductor MOS processes and low-voltage MOS processes. The high-voltage N/P wells are implanted into the substrate before defining active areas, which helps avoid lateral diffusion of the channel stop doping regions. Additionally, the grade drive-in process activates the grade doping regions in the high-voltage device area while simultaneously performing gate oxide growth for the high-voltage devices.

Another notable patent is the method of fabricating an LCOS structure. This method utilizes a high-voltage CMOS transistor and a high-voltage capacitor layer applied to the substrate. The HV capacitor layer features a higher dielectric layer and coupling ratio, allowing it to sustain higher operating voltages. This innovation increases the operating capacitance and enhances the contrast and chrominance output of the LCOS back-plate structure.

Career Highlights

Sheng-Hsiung Yang is currently employed at United Microelectronics Corporation, where he continues to advance semiconductor technologies. His expertise in high-voltage devices has positioned him as a key player in the industry.

Collaborations

Throughout his career, Yang has collaborated with notable colleagues, including Yuan-Li Tsai and Jy-Hwang Lin. These partnerships have contributed to the successful development of innovative technologies in the semiconductor field.

Conclusion

Sheng-Hsiung Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the industry. His work continues to influence advancements in integrated circuit fabrication.

Profile summary based on public USPTO records.
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