The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 2007
Filed:
Jul. 25, 2004
Jung-ching Chen, Tai-Chung Hsien, TW;
Jy-hwang Lin, Hsin-Chu, TW;
Sheng-hsiung Yang, Hsin-Chu, TW;
Jim Su, Yun-Lin Hsien, TW;
Jung-Ching Chen, Tai-Chung Hsien, TW;
Jy-Hwang Lin, Hsin-Chu, TW;
Sheng-Hsiung Yang, Hsin-Chu, TW;
Jim Su, Yun-Lin Hsien, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
A high-voltage semiconductor MOS process that is fully compatible with low-voltage MOS process is provided. The high-voltage N/P well are implanted into the substrate prior to the definition of active areas. The channel stop doping regions are formed after the formation of field oxide layers, thus avoiding lateral diffusion of the channel stop doping regions. In addition, the grade drive-in process used to activate the grade doping regions in the high-voltage device area and the gate oxide growth of the high-voltage devices are performed simultaneously.