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For the Inventor, By the Inventor

Portland, OR, United States of America

Shahriar S Ahmed

This inventor holds 14 USPTO granted patents. Top assignee: Intel Corporation. Active years: 1995-2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shahriar S Ahmed. Retrieved from https://idiyas.com/inventor/shahriar-s-ahmed

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 14

% Patents Active = 64.3

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 174(Granted Patents)


Location History:

  • Beaverton, OR (US) (1995)
  • Portland, OR (US) (2000 - 2009)

Company Filing History:

goldMedal14 out of 56,365 
 
Intel Corporation
 patents

Years Active: 1995-2009

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14 patents (USPTO):Explore Patents
1. 7517768 - Method for fabricating a heterojunction bipolar transistor (2009-04-14),
2. 7414298 - Super self-aligned collector device for mono-and hetero bipolar junction transistors, and method of making same (2008-08-19),
3. 7202514 - Self aligned compact bipolar junction transistor layout and method of making same (2007-04-10),
4. 7064042 - Self aligned compact bipolar junction transistor layout, and method of making same (2006-06-20),
5. 7015085 - Super self-aligned collector device for mono-and hetero bipolar junction transistors and method of making same (2006-03-21),
6. 7005359 - Bipolar junction transistor with improved extrinsic base region and method of fabrication (2006-02-28),
7. 6703685 - Super self-aligned collector device for mono-and hetero bipolar junction transistors (2004-03-09),
8. 6579771 - Self aligned compact bipolar junction transistor layout, and method of making same (2003-06-17),
9. 6458667 - High power PMOS device (2002-10-01),
10. 6384457 - Asymmetric MOSFET devices (2002-05-07),
11. 6297104 - Methods to produce asymmetric MOSFET devices (2001-10-02),
12. 6177705 - High power PMOS device (2001-01-23),
13. 6020244 - Channel dopant implantation with automatic compensation for variations (2000-02-01),
14. 5434093 - Inverted spacer transistor (1995-07-18),

Title: **Shahriar S Ahmed: A Pioneer in Semiconductor Innovations**

Introduction

Shahriar S Ahmed is a prominent inventor based in Portland, OR, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 14 patents, he has revolutionized the way bipolar transistors are fabricated, enhancing their efficiency and performance in various applications.

Latest Patents

Among his latest innovations, Shahriar Ahmed has developed a method for fabricating a heterojunction bipolar transistor. This advanced bipolar transistor employs a silicon-germanium-carbon (SiGe:C) film with a seed layer beneath it. The method involves placing a substrate in a reactor chamber where a silicon source gas is introduced to form the silicon seed layer at carefully controlled pressures and temperatures. After forming the seed layer, the process continues by adjusting parameters to create the SiGe:C film. Additionally, he has patented a super self-aligned collector device for both mono- and hetero bipolar junction transistors, which incorporates a self-aligned collector tap adjacent to the emitter stack.

Career Highlights

Shahriar S Ahmed is currently affiliated with Intel Corporation, where he actively contributes to pioneering advancements in semiconductor technology. His innovative approaches not only enhance the capabilities of bipolar junction transistors but also improve the overall performance of electronic devices.

Collaborations

Throughout his career, Shahriar has worked alongside esteemed colleagues such as Mark T Bohr and Stephen T Chambers. These collaborations have significantly contributed to the development of cutting-edge semiconductor technologies and have paved the way for future innovations in the field.

Conclusion

Shahriar S Ahmed's contributions to the semiconductor industry exemplify the impact of innovative thinking and dedication to advancement. With a strong foundation of patents and collaborative efforts, he continues to push the boundaries of what is possible in electronic technology. His work not only benefits Intel Corporation but also shapes the future of semiconductor applications globally.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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