The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2009
Filed:
Mar. 31, 2003
Ravindra Soman, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Peter Vandervoorn, Hillsboro, OR (US);
Shahriar Ahmed, Portland, OR (US);
Ravindra Soman, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Peter VanDerVoorn, Hillsboro, OR (US);
Shahriar Ahmed, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A bipolar transistor with a SiGe:C film and a seed layer forming beneath the SiGe:C film and methods of making same. The method includes placing a substrate in a reactor chamber and introducing a silicon source gas into the reactor chamber to form a silicon seed layer. The reactor chamber is maintained at a pressure below 45 Torr and a temperature between about 700° C. and 850° C. After the seed layer is formed, the silicon source gas is stopped. The reactor chamber is then simultaneously adjusted to a pressure between about 70 Torr and 90 Torr and a temperature between about 600° C. and 650° C. The silicon source gas, a germanium source gas, and a carbon source gas are introduced to form the SiGe:C film on the seed layer.