This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2009.
Company Filing History:
Years Active: 2009
Title: Innovations of Peter VanDerVoorn
Introduction
Peter VanDerVoorn is an accomplished inventor based in Hillsboro, OR (US). He has made significant contributions to the field of semiconductor technology, particularly in the fabrication of heterojunction bipolar transistors. His innovative methods have the potential to enhance the performance of electronic devices.
Latest Patents
Peter holds a patent for a "Method for fabricating a heterojunction bipolar transistor." This invention involves a bipolar transistor with a SiGe:C film and a seed layer forming beneath the SiGe:C film. The method includes placing a substrate in a reactor chamber and introducing a silicon source gas to form a silicon seed layer. The reactor chamber is maintained at a pressure below 45 Torr and a temperature between about 700°C and 850°C. After the seed layer is formed, the silicon source gas is stopped. The reactor chamber is then adjusted to a pressure between about 70 Torr and 90 Torr and a temperature between about 600°C and 650°C. Subsequently, the silicon source gas, a germanium source gas, and a carbon source gas are introduced to form the SiGe:C film on the seed layer. This innovative approach has the potential to improve the efficiency and effectiveness of bipolar transistors.
Career Highlights
Peter VanDerVoorn is currently employed at Intel Corporation, a leading technology company known for its advancements in semiconductor manufacturing. His work at Intel has allowed him to collaborate with some of the brightest minds in the industry, contributing to groundbreaking innovations.
Collaborations
Peter has worked alongside talented colleagues such as Ravindra Soman and Anand S Murthy. Their collaborative efforts have fostered an environment of innovation and creativity, leading to significant advancements in their field.
Conclusion
Peter VanDerVoorn's contributions to the field of semiconductor technology through his innovative patent and work at Intel Corporation highlight his role as a key inventor in the industry. His methods for fabricating heterojunction bipolar transistors represent a significant step forward in electronic device performance.