Intel Corporation

Peter VanDerVoorn

Anand S Murthy

Shahriar S Ahmed

Ravindra Soman

A bipolar transistor with a SiGe:C film and a seed layer forming beneath the SiGe:C film and methods of making same. The method includes placing a substrate in a reactor chamber and introducing a silicon source gas into the reactor chamber to form a silicon seed layer. The reactor chamber is maintained at a pressure below 45 Torr and a temperature between about 700&#xb0; C. and 850&#xb0; C. After the seed layer is formed, the silicon source gas is stopped. The reactor chamber is then simultaneously adjusted to a pressure between about 70 Torr and 90 Torr and a temperature between about 600&#xb0; C. and 650&#xb0; C. The silicon source gas, a germanium source gas, and a carbon source gas are introduced to form the SiGe:C film on the seed layer.

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Hillsboro, OR, United States of America

Peter VanDerVoorn