The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Dec. 10, 2001
Applicant:
Inventors:
Shahriar Ahmed, Portland, OR (US);
Mark Bohr, Aloha, OR (US);
Stephen Chambers, Portland, OR (US);
Richard Green, Aloha, OR (US);
Anand Murthy, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18228 ;
U.S. Cl.
CPC ...
H01L 2/18228 ;
Abstract
The invention relates to a process of forming a bipolar junction transistor (BJT) that includes forming a topology over a substrate. Thereafter, a spacer is formed at the topology. A base layer is formed from epitaxial silicon above the spacer and at the topology. A leakage block structure is formed in the substrate by out-diffusion from the spacer. Thereafter a BJT is completed with the base layer and the spacer.