IDiyas

For the Inventor, By the Inventor

Yokohama, Japan

Seiko Yoshida

USPTO Granted Patents = 5

Average Co-Inventor Count = 2.0

ph-index = 4

Forward Citations = 165(Granted Patents)


Location History:

  • Tokyo, JP (1999)
  • Yokohama, JP (1998 - 2001)

Company Filing History:

goldMedal3 out of 52,711 
 
Kabushiki Kaisha Toshiba
 patents
silverMedal2 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 30,028 
 
Siemens Aktiengesellschaft
 patents
4. 1 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1998-2001

where 'Filed Patents' based on already Granted Patents

5 patents (USPTO):
1. 6333274 - Method of manufacturing a semiconductor device including a seamless shallow trench isolation step (2001-12-25),
2. 6051885 - Semiconductor device having a conductor with a wedge shaped depression (2000-04-18),
3. 6046487 - Shallow trench isolation with oxide-nitride/oxynitride liner (2000-04-04),
4. 5885863 - Method of making a contact for contacting an impurity region formed in a (1999-03-23),
5. 5763315 - Shallow trench isolation with oxide-nitride/oxynitride liner (1998-06-09),
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