Kabushiki Kaisha Toshiba

International Business Machines Corporation

Other

Siemens Aktiengesellschaft

Seiko Yoshida

Herbert Lei Ho

David M Dobuzinsky

Philip L Flaitz

Herbert Palm

Hiroshi Takato

John Preston Benedict

James F Moseman

Erwin N Hammerl

Hiroyuki Akatsu

Soichi Nadahara

Takashi Nakao

A trench is formed. A first TEOS film is deposited in the trench. Thereafter, the first TEOS film is etched back by a wet etching method up to a planarized surface of a substrate. In this way, seams and a void generated during the first TEOS film deposition step are exposed. This is attained by performing the etching under the conditions that an etching rate for the TEOS film of the upper portion of the trench is larger than that for the TEOS film of the bottom portion of the trench. Thereafter, a second TEOS film is deposited in the trench.

Method of manufacturing a semiconductor device including a seamless shallow trench isolation step

A highly integrated semiconductor device is made using a high precision manufacturing process having a comparatively small number of process steps. The device is substantially free of misalignment between structures formed with respect to openings formed in the middle of layers. An interlayer insulating film with an opening is formed on a first conductor, and a second conductor is deposited on the resultant structure. Part of the second conductor enters the opening, thereby producing a depression in the second conductor, which has a sharp-angled bottom situated at the horizontal center of the opening. A film made of, for example, a nitride is deposited on the second conductor to fill the depression. Thereafter, this film is removed such that part of it remains in the depression. Using the remaining film as a mask, the second conductor is removed to the same level as the interlayer insulting film. Then, the remaining film is removed, and a dielectric and a third conductor are formed on the second conductor and the interlayer insulating film.

Semiconductor device having a conductor with a wedge shaped depression

Disclosed is an improved process and liner for trench isolation which includes either a single oxynitride layer or a dual oxynitride (or oxide)/nitride layer. Such a process and liner has an improved process window as well as being an effective O.sub.2 diffusion barrier and resistant to hot phosphoric and hydrofluoric acids.

Shallow trench isolation with oxide-nitride/oxynitride liner

A method for forming a contact is disclosed. A buried impurity region of a second conductivity type is formed in a semiconductor substrate of a first conductivity type. First and second well regions of a first and second conductivity types, respectively, are also formed in the semiconductor substrate. The second well region overlaps the first well region and contacts and surrounds the buried impurity region. A surface impurity concentration of the first well region is greater than a surface impurity concentration of the second well region. A contact to the second well region is formed.

Method of making a contact for contacting an impurity region formed in a

Growing community of inventors

Yokohama, Japan

Seiko Yoshida