The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 18, 2000
Filed:
Jul. 28, 1998
Seiko Yoshida, Yokohama, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
A highly integrated semiconductor device is made using a high precision manufacturing process having a comparatively small number of process steps. The device is substantially free of misalignment between structures formed with respect to openings formed in the middle of layers. An interlayer insulating film with an opening is formed on a first conductor, and a second conductor is deposited on the resultant structure. Part of the second conductor enters the opening, thereby producing a depression in the second conductor, which has a sharp-angled bottom situated at the horizontal center of the opening. A film made of, for example, a nitride is deposited on the second conductor to fill the depression. Thereafter, this film is removed such that part of it remains in the depression. Using the remaining film as a mask, the second conductor is removed to the same level as the interlayer insulting film. Then, the remaining film is removed, and a dielectric and a third conductor are formed on the second conductor and the interlayer insulating film.