Satoshi Tani

Title: Satoshi Tani: Innovator in Etching Technology

Introduction

Satoshi Tani is a notable inventor based in Kudamatsu, Japan. He has made significant contributions to the field of etching technology, holding a total of 3 patents. His work focuses on methods and equipment that enhance the etching process, particularly in semiconductor manufacturing.

Latest Patents

One of Tani's latest patents is an etching method and etching equipment designed to achieve trench etching without damaging the side walls of the trench while maintaining a high etching rate. This plasma etching method involves forming a groove or hole in a silicon substrate or a silicon substrate with a silicon oxide dielectric layer using a mixed gas plasma. The mixed gas contains SF and O or a combination of SF, O, and SiF, with an added gas containing hydrogen at a concentration of 5 to 16% of the total gas flow rate. Another significant patent is a method for etching and an apparatus for etching, which includes a forming step where a mixed gas plasma is created using a fluorinate gas and an oxygenic gas. A high-frequency bias is intermittently applied to the SOI substrate during the applying step, which is temporally modulated. This method improves the yielding rate and productivity of the etching process.

Career Highlights

Throughout his career, Satoshi Tani has worked with prominent companies such as Hitachi, Ltd. and Hitachi High-Technologies Corporation. His experience in these organizations has allowed him to develop and refine his innovative etching techniques.

Collaborations

Tani has collaborated with notable colleagues, including Kazuo Takata and Yutaka Kudou. Their combined expertise has contributed to advancements in etching technology.

Conclusion

Satoshi Tani's contributions to etching technology have made a significant impact in the semiconductor industry. His innovative methods and equipment continue to enhance the efficiency and effectiveness of etching processes.